transient voltage suppressors for esd protection revision december 18, 2013 1 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. ESD05V02D-C un semiconductor co., ltd. www.unsemi.com.tw 0201/dfn0603 the ESD05V02D-C is ultra low capacitance tvs arrays designed to protect high speed data interfaces. this series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by esd (electrostatic discharge), cde (cable discharge events), and eft (electrical fast transients). u 30 watts peak pulse power per line (tp=8/20 s) u surface mount package u low clamping voltage u working voltages : 5v u low leakage u iec61000-4-2 (esd) level 4 esd protection u ultra small smd package:0201 u cell phone handsets and accessories u microprocessor based equipment u personal digital assistants (pda s) u notebooks, desktops, and servers u portable instrumentation u peripherals u pagers u case:0201/dfn0603 package molded plastic. u terminals: gold plated, solderable per mil-std-750, method 2026. u polarity: color band denotes cathode end. u mounting position: any u reel size : 7 inch symbol parameter value units p pp peak pulse power (tp=8/20 s waveform) 30 w i pp peak pulse current (tp=8/20 s waveform) 2.0 a t j operating junction temperature range -55 to +125 o c t stg storage temperature range -55 to +150 o c t l soldering temperature, t max = 10s 260 o c air discharge 16 iec61000-4-2 (esd) contact discharge 8 kv mechanical characteristics d escription feature functional diagram applications mechanical data
transient voltage suppressors for esd protection revision december 18, 2013 2 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. ESD05V02D-C un semiconductor co., ltd. www.unsemi.com.tw v c part number device marking v rwm (v) (max.) v b (v) (min.) i t (ma) v c @1 a (max.) (max.) (@a) i r (na) (max.) c (pf) (typ.) ESD05V02D-C 5 5.0 5.5 1 12.0 15.0 2 100 6 fig1. 8/20 s pulse waveform fig2. esd pulse waveform (according to iec 61000-4-2) fig3. power derating curve electrica l characteristics ( @ 25 unless otherwise specified ) characteristic curves 60ns 10% percent of peak pulse current % 30ns tr = 0.7 ~1ns time (ns) 90% 100%
transient voltage suppressors for esd protection revision december 18, 2013 3 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. ESD05V02D-C un semiconductor co., ltd. www.unsemi.com.tw fig4. clamping voltage vs. peak pulse current fig5. capacitance between terminals characteristics soldering footprint symbol inches millimeters a 0.012 0.31 b 0.008 0.20 c 0.014 0.35 d 0.006 0.15 e 0.016 0.40 f 0.026 0.66 characteristic curves 0201/ d fn 0603 package outline & dimensions
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